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  ? 2009 microchip technology inc. ds22200b-page 1 features ? 150 ma output current ? low drop out voltage, 260 mv typical @ 20 ma, v r = 3.3v ? 50 a typical quiescent current ? 0.01 a typical shutdown current ? input operating voltage range: 2.0v to 28.0v ? standard output voltage options (1.8v, 2.5v, 3.0v, 3.3v, 5.0v, 10.0v, 12.0v) ? output voltage accuracy: 2% ? output voltages from 1.8v to 18.0v in 0.1v increments are available upon request ? stable with ceramic output capacitors ? current limit protection with current foldback ? shutdown pin ? high psrr: 50 db typical @ 1 khz applications ? cordless phones, wireless communications ? pdas, notebook and netbook computers ? digital cameras ? microcontroller power ? car audio and navigation systems ? home appliances related literature ? an765, ?using microchip?s micropower ldos? , ds00765, microchip technology inc., ?2002 ? an766, ?pin-compatible cmos upgrades to bipolar ldos? , ds00766, microchip technology inc., ?2002 ? an792, ?a method to determine how much power a sot23 can dissipate in an application? , ds00792, microchip technology inc., ?2001 description the mcp1804 is a family of cmos low dropout (ldo) voltage regulators that can deliver up to 150 ma of current while consuming only 50 a of quiescent current (typical, 1.8v v out 5.0v). the input operating range is specif ied from 2.0v to 28.0v. the mcp1804 is capable of delivering 100 ma with only 1300 mv (typical) of input to output voltage differential (v out = 3.3v). the output voltage tolerance of the mcp1804 at +25c is a maximum of 2%. line regulation is 0.15% typical at +25c. the ldo input and output is stable with 0.1 f of input and output capacitance. ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. overcurrent limit with current foldback to 40 ma (typical) provides short-circuit protection. a shutdown (shdn ) function allows the output to be enabled or disabled. when disabled, the mcp1804 draws only 0.01 a of current (typical). package options include the sot-23-5 (sot-25), sot- 89-3, sot-89-5, and sot-223-3. package types sot-23-5 123 54 v out v in nc shdn gnd sot-89-5 (top view) 123 54 v out shdn v in nc gnd 123 v out v in gnd (top view) sot-223 123 v out v in v ss (top view) sot-89-3 150 ma, 28v ldo regulator with shutdown mcp1804
mcp1804 ds22200b-page 2 ? 2009 microchip technology inc. functional block diagram typical application circuit thermal + - v in v out gnd error amplifier voltage reference current limiter shutdown control shdn protection *5-pin versions only * v in c in 1f c out 1 f ceramic v in 12v battery + v out shdn gnd nc ceramic v out 5.0v @ 30 ma 1 2 3 5 4 sot-25 mcp1804
? 2009 microchip technology inc. ds22200b-page 3 mcp1804 1.0 electrical characteristics absolute maximum ratings ? input voltage ...................................................... +30v output current (continuous)........... p d /(v in -v out )ma output current (peak)...................................... 300 ma output voltage ..................... (v ss -0.3v) to (v in +0.3v) s hdn voltage ................................(v ss -0.3v) to +30v continuous power dissipation: sot-25......................................................... 250 mw sot-89......................................................... 500 mw sot-223....................................................... 300 mw ? notice: stresses above those listed under ?maximum ratings? may cause permanent dam age to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this spec ification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. electrical characteristics electrical specifications: unless otherwise specified, all limits are established for v in = v r + 2.0v, note 1 , c out = 1 f (x7r), c in = 1 f (x7r), v shdn = v in , t a = +25c parameters sym min typ max units conditions input / output characteristics input operating voltage v in 2.0 ? 28.0 v note 1 input quiescent current i q i l = 0 ma ? 50 105 a 1.8v v out 5.0v ? 60 115 a 5.1v v out 12.0v ? 65 125 a 12.1v v out 18.0v shutdown current i shdn ? 0.01 0.10 a shdn = 0v maximum output current i out_ma v in = v r + 3.0v 100 ? ? ma v out <3.0v 150 ? ? ma v out 3.0v current limiter i limit ?200? ma output short circuit current i out_sc ?40? ma output voltage regulation v out v r -2.0% v r v r +2.0% v i out =10ma, note 2 v out temperature coefficient tcv out ?100?ppm/ci out =20ma, -40c t a + 85c, note 3 line regulation v out / (v out x v in ) (v r +2v) v in 28v, note 1 ? 0.05 0.10 %/v i out = 5 ma ? 0.15 0.30 %/v i out = 13 ma note 1: the minimum v in must meet one condition: v in (v r + 2.0v). 2: v r is the nominal regulator output voltage with an input voltage of v in = v r + 2.0v. for example: v r = 1.8v, 2.5v, 3.0v, 3.3v, etc. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temper ature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low dut y cycle pulse testing. changes in output voltage due to heating effects ar e determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which t he output voltage drops 2% below its measured value with an applied input voltage of v r + 2.0v.
mcp1804 ds22200b-page 4 ? 2009 microchip technology inc. load regulation v out /v out i l = 1.0 ma to 50 ma, note 4 ?5090 mv1.8v v out 5.0v ? 110 175 mv 5.1v v out 12.0v ? 180 275 mv 12.1v v out 18.0v dropout voltage note 1 , note 5 v dropout i l = 20 ma ? 550 710 v 1.8v v r 1.9v ? 450 600 v 2.0v v r 2.1v ? 390 520 v 2.2v v r 2.4v ? 310 450 v 2.5v v r 2.9v ? 260 360 v 3.0v v r 3.9v ? 220 320 v 4.0v v r 4.9v ? 190 280 v 5.0v v r 6.4v ? 170 230 v 6.5v v r 8.0v ? 130 190 v 8.1v v r 10.0v ? 120 170 v 10.1v v r 18.0v i l = 100 ma ? 2200 2700 v 1.8v v r 1.9v ? 1900 2600 v 2.0v v r 2.1v ? 1700 2200 v 2.2v v r 2.4v ? 1500 1900 v 2.5v v r 2.9v ? 1300 1700 v 3.0v v r 3.9v ? 1100 1500 v 4.0v v r 4.9v ? 1000 1300 v 5.0v v r 6.4v ? 800 1150 v 6.5v v r 8.0v ? 700 950 v 8.1v v r 10.0v ? 650 850 v 10.1v v r 18.0v shdn ?h? voltage v shdn_h 1.1 ? v in vv in = 28v shdn ?l? voltage v shdn_l 0?0.35vv in = 28v shdn current i shdn -0.1 ? 0.1 a v in = 28v, v shdn = gnd or v in electrical character istics (continued) electrical specifications: unless otherwise specified, all limits are established for v in = v r + 2.0v, note 1 , c out = 1 f (x7r), c in = 1 f (x7r), v shdn = v in , t a = +25c parameters sym min typ max units conditions note 1: the minimum v in must meet one condition: v in (v r + 2.0v). 2: v r is the nominal regulator output voltage with an input voltage of v in = v r + 2.0v. for example: v r = 1.8v, 2.5v, 3.0v, 3.3v, etc. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temper ature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low dut y cycle pulse testing. changes in output voltage due to heating effects ar e determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which t he output voltage drops 2% below its measured value with an applied input voltage of v r + 2.0v.
? 2009 microchip technology inc. ds22200b-page 5 mcp1804 temperature specifications power supply ripple rejection ratio psrr ? 50 ? db f = 1 khz, i l = 20 ma, v inac = 0.5v pk-pk, c in = 0 f thermal shutdown protection tsd ? 150 ? c t j thermal shutdown hysteresis tsd ? 25 ? c electrical character istics (continued) electrical specifications: unless otherwise specified, all limits are established for v in = v r + 2.0v, note 1 , c out = 1 f (x7r), c in = 1 f (x7r), v shdn = v in , t a = +25c parameters sym min typ max units conditions note 1: the minimum v in must meet one condition: v in (v r + 2.0v). 2: v r is the nominal regulator output voltage with an input voltage of v in = v r + 2.0v. for example: v r = 1.8v, 2.5v, 3.0v, 3.3v, etc. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temper ature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low dut y cycle pulse testing. changes in output voltage due to heating effects ar e determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which t he output voltage drops 2% below its measured value with an applied input voltage of v r + 2.0v. parameters sym min typ max units conditions temperature ranges operating temperature range t a -40 +85 c storage temperature range tstg -55 +125 c thermal package resistance thermal resistance, 5ld sot-23 ja jc ? ? 256 81 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-89 thermal resistance, 5ld sot-89 ja jc ? ? 180 100 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-223 ja jc ? ? 62 15 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board
mcp1804 ds22200b-page 6 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 7 mcp1804 2.0 typical performance curves note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-1: output voltage vs. output current. figure 2-2: output voltage vs. output current. figure 2-3: output voltage vs. output current. figure 2-4: output voltage vs. output current. figure 2-5: output voltage vs. output current. figure 2-6: output voltage vs. output current. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purpose s only. the performance characteristics listed herein are not tested or guaranteed. in so me graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =2.8v v in =shdn=4.8v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =5v v in =shdn=8.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =12v v in =shdn=15v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=2.8v vin=3.8v vin=4.8v v r =1.8v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=6v vin=7v vin=8v v r =5.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=13v vin=14v vin=15v v r =12v
mcp1804 ds22200b-page 8 ? 2009 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-7: output voltage vs. input voltage. figure 2-8: output voltage vs. input voltage. figure 2-9: output voltage vs. input voltage. figure 2-10: output voltage vs. input voltage. figure 2-11: output voltage vs. input voltage. figure 2-12: output voltage vs. input voltage. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 0.8 1.3 1.8 2.3 2.8 3.3 3.8 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =1.8v 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 4.04.55.05.56.0 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =5v 9.0 10.0 11.0 12.0 13.0 14.0 15.0 10 11 12 13 14 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =12v 1.5 1.6 1.7 1.8 1.9 2.0 2.1 4 8 12 16 20 24 28 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =1.8v 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 8 1216202428 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =5v 9.0 10.0 11.0 12.0 13.0 14.0 15.0 14 16 18 20 22 24 26 28 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =12v
? 2009 microchip technology inc. ds22200b-page 9 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-13: dropout voltage vs. load current. figure 2-14: dropout voltage vs. load current. figure 2-15: dropout voltage vs. load current. figure 2-16: supply current vs. input voltage. figure 2-17: supply current vs. input voltage. figure 2-18: supply current vs. input voltage. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =1.8v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 255075100125150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 255075100125150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =12v 0 10 20 30 40 50 60 70 0 4 8 1216202428 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =1.8v 0 10 20 30 40 50 60 70 0 4 8 1216202428 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =5v 0 10 20 30 40 50 60 70 0 4 8 1216202428 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =12v
mcp1804 ds22200b-page 10 ? 2009 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-19: supply current vs. input voltage. figure 2-20: supply current vs. input voltage. figure 2-21: supply current vs. input voltage. figure 2-22: output voltage vs. ambient temperature. figure 2-23: output voltage vs. ambient temperature. figure 2-24: output voltage vs. ambient temperature. 0 10 20 30 40 50 60 70 -40-20 0 20406080100 ambient temperature (c) supply current (a) v r =1.8v 0 10 20 30 40 50 60 70 -40-20 0 20406080100 ambient temperature (c) supply current (a) v r =5v 0 10 20 30 40 50 60 70 -40-200 20406080100 ambient temperature (c) supply current (a) v r =12v 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 -50-25 0 255075100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =1.8v 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 -50-250 255075100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =5v 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 -50 -25 0 25 50 75 100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =12v
? 2009 microchip technology inc. ds22200b-page 11 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-25: dynamic line response. figure 2-26: dynamic line response. figure 2-27: dynamic line response. figure 2-28: dynamic line response. figure 2-29: dynamic line response. figure 2-30: dynamic line response. 1.3 2.3 3.3 4.3 5.3 6.3 7.3 time (1ms/div) input voltage (v) 3.26 3.28 3.30 3.32 3.34 3.36 3.38 output voltage (v) v out v in v r =3.3v i out =1 ma 3 4 5 6 7 8 9 time (1ms/div) input voltage (v) 4.96 4.98 5.00 5.02 5.04 5.06 5.08 output voltage (v) v out v in v r =5v i out 1 ma 10 11 12 13 14 15 16 time (1ms/div) input voltage (v) 11.96 11.98 12.00 12.02 12.04 12.06 12.08 output voltage (v) v out v in v r =12v i out =1 ma 1.3 2.3 3.3 4.3 5.3 6.3 7.3 time (1ms/div) input voltage (v) 3.26 3.28 3.30 3.32 3.34 3.36 3.38 output voltage (v) v out v in v r =3.3v i out =30 ma 3 4 5 6 7 8 9 time (1ms/div) input voltage (v) 4.96 4.98 5.00 5.02 5.04 5.06 5.08 output voltage (v) v out v in v r =5v i out =30 ma 10 11 12 13 14 15 16 time (1ms/div) input voltage (v) 11.96 11.98 12.00 12.02 12.04 12.06 12.08 output voltage (v) v r =12v i out =30 ma v out v in
mcp1804 ds22200b-page 12 ? 2009 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-31: dynamic load response. figure 2-32: dynamic load response. figure 2-33: dynamic load response. figure 2-34: startup response. figure 2-35: startup response. figure 2-36: startup response. 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) output current v out v r =3.3v 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) output current v out v r = 5v 10.6 10.8 11.0 11.2 11.4 11.6 11.8 12.0 12.2 12.4 12.6 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) v out v r = 12v i out -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =3.3v i out =1 ma v in -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =3.3v i out =30 ma v in -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =5.0v i out =1 ma v in
? 2009 microchip technology inc. ds22200b-page 13 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-37: startup response. figure 2-38: startup response. figure 2-39: startup response. figure 2-40: shdn response. figure 2-41: shdn response. figure 2-42: shdn response. -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =5.0v i out =30 ma v in -15 -10 -5 0 5 10 15 time (1ms/div) input voltage (v) 0 3 6 9 12 15 18 output voltage (v) v r =12v i out =1 ma v out v in -15 -10 -5 0 5 10 15 time (1ms/div) input voltage (v) 0 3 6 9 12 15 18 output voltage (v) v r =12v i out =30 ma v in v out -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =3.3v i out =1 ma v out shdn -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =5v i out =1 ma v out shdn -15 -10 -5 0 5 10 15 time (1ms/div) shdn voltage (v) 0 3 6 9 12 15 18 vout (v) v r =12v i out =1 ma v out shdn
mcp1804 ds22200b-page 14 ? 2009 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-43: shdn response. figure 2-44: shdn response. figure 2-45: shdn response. figure 2-46: psrr 3.3v @ 1 ma. figure 2-47: psrr 5.0v @ 1 ma. figure 2-48: psrr 12.0v @ 1 ma. -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =3.3v i out =30 ma v out shdn -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =5v i out =30 ma v out shdn -15 -10 -5 0 5 10 15 time (1ms/div) shdn voltage (v) 0 3 6 9 12 15 18 v out (v) v out v r =12v i out =30 ma shdn 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =3.3v c in =0 i out =1 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =5v c in =0 i out =1 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =12v c in =0 i out =1 ma v in_ac =0.5vp-p
? 2009 microchip technology inc. ds22200b-page 15 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-49: psrr 3.3v @ 30 ma. figure 2-50: psrr 5.0v @ 30 ma. figure 2-51: psrr 12.0v @ 30 ma. 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =3.3v c in =0 i out =30 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =5v c in =0 i out =30 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =12v c in =0 i out =30 ma v in_ac =0.5vp-p
mcp1804 ds22200b-page 16 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 17 mcp1804 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . table 3-1: mcp1804 pin function table 3.1 unregulated input voltage (v in ) connect v in to the input unregulated source voltage. like all low dropout linear regulators, low source impedance is necessary for the stable operation of the ldo. the amount of capacitance required to ensure low source impedance will de pend on the proximity of the input source capacitors or battery type. for most applications, 0.1 f to 1.0 f of capacitance will ensure stable operation of the ldo circuit. the type of capacitor used can be ceramic, tantalum or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high-frequency. 3.2 ground terminal (gnd) regulator ground. tie gnd to the negative side of the output and the negative side of the input capacitor. only the ldo bias current (5 0 to 60 a typical) flows out of this pin; there is no high current. the ldo output regulation is referenced to this pin. minimize voltage drops between this pin and the negative side of the load. 3.3 shutdown input (shdn ) the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at a logic-high level, the ldo output volt age is enabled. when the shdn input is pulled to a logic-low level, the ldo output voltage is disabled and the ldo enters a low quiescent current shutdown state where the typical quiescent current is 0.01 a. the shdn pin does not have an internal pullup or pulldown resistor. the s hdn pin must be connected to either v in or gnd to prevent the device from becoming unstable. 3.4 regulated output voltage (v out ) connect v out to the positive side of the load and the positive terminal of the output capacitor. the positive side of the output capa citor should be physically located as close to the ldo v out pin as is practical. the current flowing out of this pin is equal to the dc load current. for most applications, 0.1 f to 1.0 f of capacitance will ensure stable operation of the ldo circuit. larger values may be used to improve dynamic load response. the type of capacitor used can be ceramic, tantalum or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high-frequency. mcp1804 symbol description sot-23-5 sot-89-5 sot-223-3, sot-89-3 15 3 v in unregulated supply voltage 2 2,tab 2, tab gnd ground terminal 34 ? nc no connection 43 ? shdn shutdown 51 1v out regulated voltage output
mcp1804 ds22200b-page 18 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 19 mcp1804 4.0 detailed description 4.1 output regulation a portion of the ldo output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. the error amplifier output will adjust the amount of curr ent that flows through the p-channel pass transistor, thus regulating the output voltage to the desired value. any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to figure 4-1 ). 4.2 overcurrent the mcp1804 internal circuitry monitors the amount of current flowing through the p-channel pass transistor. in the event that the load current reaches the current limiter level of 200 ma (typ ical), the current limiter circuit will operate and the output voltage will drop. as the output voltage drops, the internal current foldback circuit will further reduce the output voltage causing the output current to decrease. when the output is shorted, a typical output current of 50 ma flows. 4.3 shutdown the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at a logic-high level, the ldo output voltage is enabled. when the shdn input is pulled to a logic-low level, the ldo output voltage is disabled and the ldo enters a low quiescent current shutdown state where the typical quiescent current is 0.01 a. the shdn pin does not have an internal pullup or pulldown resistor. therefore the shdn pin must be pulled either high or low to prevent the device from becoming unstable. the internal device current will increase when the device is operational and current flows through the pullup or pull-down resistor to the shdn pin internal logic. the shdn pin internal logic is equivalent to an inverter input. 4.4 output capacitor the mcp1804 requires a minimum output capacitance of 0.1 f to 1.0 f for output voltage stability. ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. aluminum-electrolytic and tantalum capacitors can be used on the ldo output as well. the output capacitor should be located as clos e to the ldo output as is practical. ceramic materials x7r and x5r have low temperature coefficients. larger ldo output capacitors can be used with the mcp1804 to improve dynamic performance and power supply ripple rejection performance. aluminum- electrolytic capacitors are not recommended for low temperature applications of < -25c. 4.5 input capacitor low input source impedance is necessary for the ldo output to operate properly. when operating from batteries, or in applicat ions with long lead length (> 10 inches) between the input source and the ldo, some input capacitance is recommended. a minimum of 0.1 f to 1.0 f is recommended for most applications. for applications that have output step load requirements, the input capa citance of the ldo is very important. the input capacitance provides the ldo with a good local low-impedance source to pull the transient currents from in order to respond quickly to the output load step. for good step response performance, the input capacitor should be of equivalent or higher value than the output capacitor. the capacitor should be placed as close to the input of the ldo as is practical. lar ger input capacitors will also help reduce any high-frequency noise on the input and output of the ldo and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the ldo. 4.6 thermal shutdown the mcp1804 thermal shutdown circuitry protects the device when the internal junction temperature reaches the typical thermal limit value of +150c. the thermal limit shuts off the output dr ive transistor. device output will resume when the internal junction temperature falls below the thermal limit value by an amount equal to the thermal limit hysteresis value of +25c.
mcp1804 ds22200b-page 20 ? 2009 microchip technology inc. figure 4-1: block diagram. thermal + - v in v out gnd error amplifier voltage reference current limiter shutdown control shdn protection 5-pin versions only * *
? 2009 microchip technology inc. ds22200b-page 21 mcp1804 5.0 functional description the mcp1804 cmos linear regulator is intended for applications that need the low current consumption while maintaining output voltage regulation. the operating continuous load range of the mcp1804 is from 0 ma to 150 ma. the input operating voltage range is from 2.0v to 28.0v, making it capable of operating from a single 12v battery or single and multiple li-ion cell batteries. 5.1 input the input of the mcp1804 is connected to the source of the p-channel pmos pass transistor. as with all ldo circuits, a relatively low source impedance (< 10 ) is needed to prevent the input impedance from causing the ldo to become unstable. the size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. for most applications a 0.1 f ceramic capacitor will be sufficient to ensure circuit stability. larger values can be used to improve circuit ac performance. 5.2 output the maximum rated continuous output current for the mcp1804 is 150 ma. a minimum output capacitance of 0.1 f to 1.0 f is required for small signal st ability in applications that have up to 150 ma output current capability. the capacitor type can be ceramic, tantalum or aluminum electrolytic.
mcp1804 ds22200b-page 22 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 23 mcp1804 6.0 application circuits and issues 6.1 typical application the mcp1804 is most commonly used as a voltage regulator. it?s low quiescent current and wide input volt- age make it ideal for li-ion and 12v battery-powered applications. figure 6-1: typical application circuit. 6.1.1 application input conditions 6.2 power calculations 6.2.1 power dissipation the internal power dissipat ion of the mcp1804 is a function of input voltage, output voltage and output current. the power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (50.0 a x v in ). the following equation can be used to calculate the internal power dissipation of the ldo. equation 6-1: the maximum continuous operating temperature specified for the mcp1804 is +85 c . to estimate the internal junction temperature of the mcp1804, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (r ja ). the thermal resistance from junction to ambient for the sot-23 pin package is estimated at 256 c/w. equation 6-2: the maximum power dissipation capability for a package can be calculated given the junction- to-ambient thermal resi stance and the maximum ambient temperature for the application. the following equation can be used to determine the package maximum internal power dissipation. equation 6-3: equation 6-4: equation 6-5: package type = sot-23 input voltage range = 3.8v to 4.2v v in maximum = 4.6v v out typical = 1.8v i out =50ma maximum gnd v out v in c in 1f c out 1 f ceramic v out v in 4.2v 1.8v i out 50 ma ceramic shdn nc mcp1804 p ldo v in max ) () v out min () ? () i out max ) () = where: p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage t jmax () p total r ja t amax + = where: t j(max) = maximum continuous junction temperature. p total = total device power dissipation. rq ja = thermal resistance from junction to ambient. t amax = maximum ambient temperature. p dmax () t jmax () t amax () ? () r ja --------------------------------------------------- = where: p d(max) = maximum device power dissipation. t j(max) = maximum continuous junction temperature. t a(max) = maximum ambient temperature. rq ja = thermal resistance from junction to ambient. t jrise () p dmax () r ja = where: t j(rise) = rise in device junction temperature over the ambient temperature. p total = maximum device power dissipation. rq ja = thermal resistance from junction to ambient. t j t jrise () t a + = where: t j = junction temperature. t j(rise) = rise in device junction temperature over the ambient temperature. t a = ambient temperature.
mcp1804 ds22200b-page 24 ? 2009 microchip technology inc. 6.3 voltage regulator internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. the power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 power dissipation example 6.3.1.1 device junction temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the thermal resistance from junction to ambient (r ja ) is derived from an eia/jedec standard for measuring thermal resistance for small surface mount packages. the eia/ jedec specification is jesd51-7, ?high effective thermal conductivity test board for leaded surface mount packages?. the standard describes the test method and board specifications for measuring the thermal resistance from junc tion to ambient. the actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. refe r to an792, ?a method to determine how much power a sot23 can dissipate in an application? (ds00792), fo r more informat ion regarding this subject. 6.3.1.2 junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for th is example, the worst-case junction temperature is estimated below. maximum package power dissipation at +25c ambient temperature (m inimum pcb footprint) 6.4 voltage reference the mcp1804 can be used not only as a regulator, but also as a low quiescent current voltage reference. in many microcontroller applications, the initial accuracy of the reference can be ca librated using production test equipment or by using a ratio measurement. when the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the mcp1804 ldo. the low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the mcp1804 as a voltage reference. figure 6-2: using the mcp1804 as a voltage reference. package: package type = sot-23 input voltage: v in = 3.8v to 4.6v ldo output voltages and currents: v out =1.8v i out =50ma maximum ambient temperature: t a(max) =+40c internal power dissipation: internal power dissipation is the product of the ldo output current times the voltage across the ldo (v in to v out ). p ldo(max) =(v in(max) - v out(min) ) x i out(max) p ldo = (4.6v - (0.98 x 1.8v)) x 50 ma p ldo = 141.8 milli-watts t j(rise) =p total x rq ja t jrise = 141.8 milli-watts x 256.0 c/watt t jrise = 36.3 c t j =t jrise + t a(max) t j =76.3c sot-23 (256c/watt = r ja ): p d(max) = (85c - 25c) / 256c/w p d(max) = 234 milli-watts sot-89 (180c/watt = r ja ): p d(max) = (85c - 25c) / 180c/w p d(max) = 333 milli-watts picmicro ? gnd v in c in 1f c out 1f bridge sensor v out v ref ado ad1 ratio metric reference 50 a bias microcontroller mcp1804
? 2009 microchip technology inc. ds22200b-page 25 mcp1804 6.5 pulsed load applications for some applications, there are pulsed load current events that may exceed the specified 150 ma maximum specification of the mcp1804. the internal current limit of the mcp1804 will prevent high peak load demands from causing non-recoverable damage. the 150 ma rating is a maximum average continuous rating. as long as the average current does not exceed 150 ma nor the max power di ssipation of the packaged device, pulsed higher load currents can be applied to the mcp1804 . the typical current limit for the mcp1804 is 200 ma (t a = +25c).
mcp1804 ds22200b-page 26 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 27 mcp1804 7.0 packaging information 7.1 package marking information legend: xx...x customer-speci fic information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part numbe r cannot be marked on one line, it will be carried over to the next line, t hus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead sot-89 example: 5-lead sot-23 xxnn example: 80k25 xxxxxxx nnn xxxyyww 3-lead sot-223 nnn xxxyyww example: 80k25 84k25 part number code mcp1804t-1802i/ot 80knn mcp1804t-2502i/ot 80tnn mcp1804t-3002i/ot 80znn mcp1804t-3302i/ot 812nn mcp1804t-5002i/ot 81mnn mcp1804t-a002i/ot 839nn mcp1804t-c002i/ot 83znn part number code mcp1804t-1802i/mt 80knn mcp1804t-2502i/mt 80tnn mcp1804t-3002i/mt 80znn mcp1804t-3302i/mt 812nn mcp1804t-5002i/mt 81mnn mcp1804t-a002i/mt 839nn mcp1804t-c002i/mt 83znn part number code mcp1804t-1802i/db 84knn mcp1804t-2502i/db 84tnn mcp1804t-3002i/db 84znn mcp1804t-3302i/db 852nn mcp1804t-5002i/db 85mnn mcp1804t-a002i/db 879nn mcp1804t-c002i/db 87znn 3-lead sot-89 example: nnn xxxyyww 84k25 part number code mcp1804t-1802i/mb 84knn mcp1804t-2502i/mb 84tnn mcp1804t-3002i/mb 84znn mcp1804t-3302i/mb 852nn mcp1804t-5002i/mb 85mnn mcp1804t-a002i/mb 879nn mcp1804t-c002i/mb 87znn
mcp1804 ds22200b-page 28 ? 2009 microchip technology inc. 
 

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? 2009 microchip technology inc. ds22200b-page 33 mcp1804 appendix a: revision history revision b (november 2009) the following is the list of modifications: 1. electrical characteristics, shdn ?h? voltage item: changed to shdn ?l? voltage. revision a (september 2009) ? original release of this document.
mcp1804 ds22200b-page 34 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 35 mcp1804 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . part no. x /x x -x x voltage package temperature range device device mcp1804t: ldo voltage regulator (tape and reel) voltage options 18 = 1.8v 25 = 2.5v 30 = 3.0v 33 = 3.3v 50 = 5.0v a0 = 10v c0 = 12v output voltage to l e r a n c e 02 = 2% temperature range i = -40 c to +85 c (industrial) package db = 3-lead plastic small outlinetransistor (sot-223) mb = 3-lead plastic small outlinetransistor (sot-89) mt = 5-lead plastic small outlinetransistor (sot-89) ot = 5-lead plastic small outlinetransistor (sot-23) examples: a) mcp1804t-1802i/ot: 1.8v, 5-ld sot-23 b) mcp1804t-2502i/ot: 2.5v, 5-ld sot-23 c) mcp1804t-3002i/ot: 3.0v, 5-ld sot-23 d) mcp1804t-3302i/ot: 3.3v, 5-ld sot-23 e) mcp1804t-5002i/ot: 5.0v, 5-ld sot-23 f) mcp1804t-a002i/ot: 10v, 5-ld sot-23 g) mcp1804t-c002i/ot: 12v, 5-ld sot-23 a) mcp1804t-1802i/mb: 1.8v, 5-ld sot-89 b) mcp1804t-2502i/mb: 2.5v, 5-ld sot-89 c) mcp1804t-3002i/mb: 3.0v, 5-ld sot-89 d) mcp1804t-3302i/mb: 3.3v, 5-ld sot-89 e) mcp1804t-5002i/mb: 5.0v, 5-ld sot-89 f) mcp1804t-a002i/mb: 10v, 5-ld sot-89 g) mcp1804t-c002i/mb: 12v, 5-ld sot-89 a) mcp1804t-1802i/mt: 1.8v, 5-ld sot-89 b) mcp1804t-2502i/mt: 2.5v, 5-ld sot-89 c) mcp1804t-3002i/mt: 3.0v, 5-ld sot-89 d) mcp1804t-3302i/mt: 3.3v, 5-ld sot-89 e) mcp1804t-5002i/mt: 5.0v, 5-ld sot-89 f) mcp1804t-a002i/mt: 10v, 5-ld sot-89 g) mcp1804t-c002i/mt: 12v, 5-ld sot-89 a) mcp1804t-1802i/db: 1.8v, 3-ld sot-223 b) mcp1804t-2502i/db: 2.5v, 3-ld sot-223 c) mcp1804t-3002i/db: 3.0v, 3-ld sot-223 d) mcp1804t-3302i/db: 3.3v, 3-ld sot-223 e) mcp1804t-5002i/db: 5.0v, 3-ld sot-223 f) mcp1804t-a002i/db: 10v, 3-ld sot-223 g) mcp1804t-c002i/db: 12v, 3-ld sot-223 t tape and reel x x output voltage tolerance
mcp1804 ds22200b-page 36 ? 2009 microchip technology inc. notes:
? 2009 microchip technology inc. ds22200b-page 37 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, th e microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are register ed trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, a pplication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, octopus, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, pic 32 logo, real ice, rflab, select mode, total endurance, tsharc, uniwindr iver, wiperlock and zena are trademarks of microchip te chnology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2009, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified.
ds22200b-page 38 ? 2009 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://support.microchip.com web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 cleveland independence, oh tel: 216-447-0464 fax: 216-447-0643 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 kokomo kokomo, in tel: 765-864-8360 fax: 765-864-8387 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8528-2100 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - hong kong sar tel: 852-2401-1200 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8203-2660 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-3090-4444 fax: 91-80-3090-4080 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - yokohama tel: 81-45-471- 6166 fax: 81-45-471-6122 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-6578-300 fax: 886-3-6578-370 taiwan - kaohsiung tel: 886-7-536-4818 fax: 886-7-536-4803 taiwan - taipei tel: 886-2-2500-6610 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 w orldwide s ales and s ervice 03/26/09


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